Publications

Razado-Colambo I., Avila J., Vignaud D., Godey S., Wallart X., Woodruff D.P., Asensio M.C. (2018). Structural determination of bilayer graphene on SiC (0001) using synchrotron radiation photoelectron diffraction, Scientific Reports, 8, 10190.

Razado-Colambo I, Avila J., Nys J.P., Chen C., Wallart X., Asensio M.C., Vignaud D. (2016). NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles, Scientific Reports, 6, 27261.

Razado-Colambo I., Avila J., Chen C, Nys J.P, Wallart X., Asensio M.C., Vignaud D. (2015). Probing the electronic properties of graphene on SiC(000-1) down to single domains by nanoresolved photoelectron spectroscopies , Physical Review B, 92, 035105.

Avila J., Razado-Colambo I., Lorcy S., Fleurier R., Pichonat E., Vignaud D., Wallart X., M. C. Asensio (2013). Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study, Scientific Reports, 3, 2439.

De Padova P., Avila J., Resta A., Razado-Colambo I., Quaresima C., Ottaviani C., Olivieri B., Bruhn T., Vogt P., Asensio M.C., Le Lay G. (2013). The quasiparticle band dispersion in epitaxial multilayer silicene, Journal of Phys.: Condensed Matter, 25, 382202.

Avila J., Razado-Colambo I., Lorcy S., Lagarde B., Polack F., Asensio M.C (2013). ANTARES, a scanning photoemission microscopy beamline at SOLEIL, Journal of Physics Conferences Series, 425, 192023.

Razado-Colambo I.C., Zhang H.M., Uhrberg R.I.G (2009). Electronic structure of H/Ge(111) 1×1 studied by ARPES, Physical Review B 80, 193403.

Razado-Colambo I.C., He J., Zhang H.M., Hansson G.V., Uhrberg R. I. G. (2009). Electronic structure of Ge(111) c(2×8): STM, ARPES and theory, Physical Review B, 79, 205410.

Razado-Colambo I.C., Zhang H.M., Hansson G.V., Uhrberg R. I. G. (2006). Hydrogen-induced metallization on Ge(111) c(2×8), Applied Surface Science, 252, 530.

Razado-Colambo I.C., Zhang H.M., Uhrberg R. I. G. Hansson G.V. (2005). STM study of site selective hydrogen adsorption on Si(111) 7×7, Physical Review B, 71, 23541.